Chemical vapor deposition of cobalt silicide
WebThe formation of smooth, conformal cobalt disilicide (CoSi 2) without facets or voids is critical for microelectronic device reliability owing to the ultra-shallow contact areas. Here … Webdeposition from cobaltocene does not occur on any substrate,28 while use of C5H5Co(CO)2 results in Co films containing up to 50 atom carbon.22 It is thus apparent …
Chemical vapor deposition of cobalt silicide
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WebWe have deposited polycrystalline cobalt silicide films by chemical vapor deposition using Co2(CO)8or HCo(CO)4as the Co source and SiH4or Si2H6as the Si source. The Co:Si ratio of the films is controlled by changing the deposition temperature, and CoSi2stoichiometry is obtained at 300 °C using SiH4or at 225 °C when Si2H6is the Si … WebJun 4, 1998 · We have deposited polycrystalline cobalt silicide films by chemical vapor deposition using Co 2 (CO) 8 or HCo (CO) 4 as the Co source and SiH 4 or Si 2 H 6 as the Si source. The Co:Si ratio of the films is controlled by changing the deposition …
WebTungsten is used because of the extraordinarily good conformality of CVD from WF 6. It is necessary to provide an adhesion/barrier layer such as Ti/TiN, to protect the underlying Si from attack by fluorine and to ensure adhesion of W to the silicon dioxide. This approach appears to still be in use in (at least) 28 nm CMOS processes, using ... WebHere, we show that, by selecting an appropriate cobalt pre-cursor, Co 2 (CO) 8, and low-temperature in situ deposition con-ditions (SiH 4 at 55 °C in toluene with Si (100) wafer), a homo-geneous and conformal cobalt silicide layer can be grown on Si substrates. After thermal annealing under vacuum, this layer contains a single-crystalline CoSi
Web"Chemical Vapor Deposition of Cobalt and Formation of Cobalt Disilicide", M. E. Gross and K. J. Schnoes 759 PART VA III-V MATERIALS BY MOCVD 72. ... Silicide", T. Hara, Y. Ishizawa, H. Wu, D. Hemmes, and R. Rosier °67 84. "Low Temperature Deposition by Laser Induced Breakdown in the WebThe Effects of Processing Parameters in the Chemical Vapor Deposition of Cobalt from Cobalt Tricarbonyl Nitrosyl Ana R. Ivanova,a Guillermo Nuesca,a Xiaomeng Chen,a Cindy Goldberg,a Alain E ...
WebApr 26, 1985 · The coating of various substrate materials with thin layers of silicon carbide (SiC) and its applications were investigated. SiC was prepared by a chemical vapour …
WebJan 25, 2011 · Diamond/β-SiC/cobalt silicide composite films were synthesized as an interlayer for deposition of adherent diamond coating on Co-cemented tungsten carbide (WC–Co) substrates by direct current plasma assisted hot filament chemical vapor deposition using a gas mixture of hydrogen, methane and tetramethylsilane (TMS). diamond style chair wayfaircis degrees near meWebJun 1, 2013 · The main concern regarding the metal deposition for silicide contact is mainly caused by the limited step coverage of physical vapor deposition (PVD) … diamond styles leicesterWebThe increase in silicide thickness (25nm) noticed on Nmos and Pmos (Figure 4), certainly due to the lateral diffusion of nickel deposited on the STI close to the cis definition world historyWebFeb 17, 2010 · Abstract. Cobalt silicide nanoparticles in mesoporous silica SBA-15 were successfully prepared by metal-organic chemical vapor deposition of a single-source … diamond style limousineWebWe have deposited polycrystalline cobalt silicide films by chemical vapor deposition using Co2(CO)8or HCo(CO)4as the Co source and SiH4or Si2H6as the Si source. The … cis deliveryWebEPITAXY OF COBALT SILICIDE FROM LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION OF COBALT Inventors: Alain E. Kaloyeros, Slingerlands, NY (US); Ana Londergan, Campbell, CA diamond style soundclick